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Germanium Quantum Technology Solutions

01 /What can CMOS technology do for quantum computing? 02 /Semiconductor devices and scaling with industrial approach 03 /Semiconductor foundry facilities: the good and the bad for qubits 04 /IMEC's latest qubit developments 05 /Summary and outlook 06 /Semiconductors for spin qubits 07 /Germanium quantum wells on silicon 08 /Germanium quantum wells on silicon-germanium 09 /Growth methods 10 /Characterization techniques 11 /Electrical characterization of germanium quantum wells 12 /Fabrication of H-FET 13 /Semiconductor qubits: vision and challenges 14 /Quantum materials 15 /Quantum dot qubits and their operation 16 /Types of quantum dot qubits 17 /Qubit Readout 18 /Qubit Control 19 /Qubit Coherence and Fidelity 20 /Multi-qubit control and quantum algorithms 21 /Quantum links and scaling 22 /Physics of holes 23 /Hole spin qubits 24 /Introduction to electronics for quantum computing 25 /Room temperature electronics 26 /Cryogenic qubit chip carriers 27 /Contribution to IGNITE 28 /Quantum Control Stack for Spin Qubits 29 /What is auto-tuning? 30 /Neural network tuning 31 /Navigating charge stability diagrams 32 /Experimental implementation 33 /Towards universal quantum algorithms 34 /Classical error correction 35 /Quantum error correction 36 /Progress and challenges 37 /Introduction to quantum algorithms 38 /The first algorithms 39 /Quantum annealing 40 /Quantum Machine Learning

Growth methods

True or False: The substrate must be kept away from the plasma in the LEPECVD growth chamber so that ions do not damage the crystalline structure of the deposited layers.

False.

In contrast to many implementations of PECVD, the low-energy direct-current arc discharge in the LEPECVD system is magnetically confined onto the substrate. The ion energy is only a few eV, so the kinetic energy of the ions (which in any case are neutralized by picking off electrons from the substrate as they arrive) just contributes some small heating effect to the substrate. Only a small fraction of the species in the chamber are ionized (about 1 in 10,000) and the high growth rate is rather due to neutral SiHx and GeHx radicals. See for example:

M. Rondanini, S. Cereda, F. Montalenti, L. Miglio, and C. Cavallotti. A multiscale model of the plasma assisted deposition of crystalline silicon. Surf. Coat. Technol. 201 (22--23) 8863--8867 (2007) http://dx.doi.org/10.1016/j.surfcoat.2007.04.104

Maurizio Rondanini, Carlo Cavallotti, Daria Ricci, Daniel Chrastina, Giovanni Isella, Tamara Moiseev, and Hans von Känel. An experimental and theoretical investigation of a magnetically confined dc plasma discharge. J. Appl. Phys. 104 (1) 013304 (2008) https://doi.org/10.1063/1.2948927