Characterization techniques
Composition and strain of the buffer layer, and the thickness of the QW, are routinely measured by high-resolution x-ray diffraction (XRD). The X-ray wavelength is similar to the spacing between the atoms in the crystal, and Ge makes this spacing larger, so a precise measurement of the diffraction angle gives the germanium content of the SiGe alloy. For a thin (< 150 nm) QW and cap, XRD is effectively a Fourier transform of the structure, so by comparing with simulations we find the thicknesses of the QW and cap layer. While XRD can also give some indications as to the quality of the material, defects in the structure can instead be seen by transmission electron microscopy (TEM) which can also map strain and composition at the atomic scale. Secondary-ion mass spectrometry is used to quantify the presence of impurity atoms which may degrade the qubit performance.
Prerequisite knowledge
- Hooke’s law, stress and strain
- Bragg’s law of diffraction
- Fourier transform
- Some facility with reciprocal space is useful for understanding the presentation of the x-ray results
Main takeaways
- X-ray diffraction gives the composition and strain state of thick layers, and can be routinely performed on every wafer.
- Diffraction of thin coherent layers corresponds to a Fourier transform of the structure, so that the QW and barrier thicknesses can be found.
- Transmission electron microscopy would directly show if there are any defects in the QW, and can be used to see the atomic composition and strain directly but on a very small scale.
- Secondary-ion mass spectrometry can be used to directly look for impurity atoms in the grown layers, as well as to check the QW profile against the other methods.
Further thinking
True or False: Geometrical Phase Analysis (GPA) carried out in TEM measurements of the Ge QW with respect to a reference point in the SiGe barrier indicates an in-plane strain close to 0. This means that the QW is fully relaxed.
Further reading
Günther Bauer et al., X-ray reciprocal space mapping of Si/Si1xGex heterostructures. J. Cryst. Growth 157 (1--4) 61--67 (1995) http://dx.doi.org/10.1016/S0022-0248(95)00372-X
https://doi.org/10.1016/0022-0248(95)00372-X
The data in this presentation are also presented in Daniel Jirovec et al., A singlet triplet hole spin qubit in planar Ge. Nature Mater. 20 (8) 1106--1112 (2021) https://www.nature.com/articles/s41563-021-01022-2
Dynamical simulations were made using the free open source python package “xrayutilities”: D. Kriegner et al., xrayutilities: a versatile tool for reciprocal space conversion of scattering data recorded with linear and area detectors. J. Appl. Cryst. 46 (4) 1162--1170 (2013)
http://dx.doi.org/10.1107/S0021889813017214
https://xrayutilities.sourceforge.io/