Electrical characterization of germanium quantum wells
Understanding the electrical properties of germanium quantum wells is a critical step in the development cycle of high-performance germanium spin qubits. In this video you will learn about what metrics are relevant and how we measure them.
Prerequisite knowledge
- Basic understanding of semiconductor heterostructures
- Ohm’s law
Main takeaways
- Hall bar shaped heterostructure field effect transistor allow to measure the electrical properties of germanium quantum wells
- By measuring mobility-density curves at cryogenic temperatures we may learn about the electrostatic landscape and disorder in the surroundings of a qubit
- Electrical properties are meaningful if measured in a statistical way
Further thinking
True or False: In strained germanium quantum wells the two topmost valance bands are degenerate in energy.
Further reading
Scappucci, G., Kloeffel, C., Zwanenburg, F.A. et al. The germanium quantum information route. Nat Rev Mater 6, 926–943 (2021). https://doi.org/10.1038/s41578-020-00262-z