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Germanium Quantum Technology

01 /What can CMOS technology do for quantum computing? 02 /Semiconductor devices and scaling with industrial approach 03 /Semiconductor foundry facilities: the good and the bad for qubits 04 /IMEC's latest qubit developments 05 /Summary and outlook 06 /Semiconductors for spin qubits 07 /Germanium quantum wells on silicon 08 /Germanium quantum wells on silicon-germanium 09 /Growth methods 10 /Characterization techniques 11 /Electrical characterization of germanium quantum wells 12 /Fabrication of H-FET 13 /Semiconductor qubits: vision and challenges 14 /Quantum materials 15 /Quantum dot qubits and their operation 16 /Types of quantum dot qubits 17 /Qubit Readout 18 /Qubit Control 19 /Qubit Coherence and Fidelity 20 /Multi-qubit control and quantum algorithms 21 /Quantum links and scaling 22 /Physics of holes 23 /Hole spin qubits 24 /Introduction to electronics for quantum computing 25 /Room temperature electronics 26 /Cryogenic qubit chip carriers 27 /Contribution to IGNITE 28 /Quantum Control Stack for Spin Qubits 29 /Auto-tuning a quantum computer 30 /Tuning and operation of arrays 31 /Finding operation points example 32 /What is auto-tuning? 33 /Neural network tuning 34 /Navigating charge stability diagrams 35 /Experimental implementation 36 /Towards universal quantum algorithms 37 /Classical error correction 38 /Quantum error correction 39 /Progress and challenges 40 /Introduction to quantum algorithms 41 /The first algorithms 42 /Quantum annealing 43 /Quantum Machine Learning

Fabrication of H-FET

Heterostructure field effect transistors (H-FETs) are powerful tools to investigate the transport properties of two-dimensional hole gases in germanium quantum wells. In this video, you will learn how  H-FETs are made and show examples where measurements of H-FETs help us engineer better materials for qubits.

Prerequisite knowledge

  • Basic understanding of semiconductor heterostructures 
  • Ohm’s law 
  • Concepts of mobility and percolation density 

Main takeaways

  • Hall bar shaped heterostructure field effect transistor are devices similar to transistor, but comprise multiple ohmic contacts 
  • Electrical characterization of H-FETs at low temperature is a crucial part of the feedback loop to optimize germanium quantum wells 

Further thinking

True or false: Do H-FETs with germanium quantum wells require ion implantation for making ohmic contacts?

Solution

Further reading

G. Scappucci et al. The germanium quantum information route. Nat Rev Mater 6, 926–943 (2021). https://doi.org/10.1038/s41578-020-00262-z 

Sammak et al Adv. Funct. Mater, 29, 1807613 (2019) https://doi.org/10.1002/adfm.201807613 

L. E. A. Stehouwer et al Appl. Phys. Lett. 123, 092101 (2023) https://doi.org/10.1063/5.0158262