Semiconductors for spin qubits
The Ignite project is based around germanium, the semiconductor with the right balance of material properties which make it the best material in which to fabricate spin-based qubits.
Spin qubits in germanium are based on holes rather than electrons. The energy difference between spin states for holes in germanium is larger than for electrons in either silicon or gallium arsenide, so that weaker magnetic fields can be used, and indeed this can even be tuned by the geometry of the quantum dot. Strong spin-orbit coupling means that spin can be manipulated with electric fields without needing a nearby micromagnet. The effective mass for holes is smaller than for electrons in silicon, so that qubits can be made larger (50-100 nm). The dominant isotopes of germanium have no nuclear spin, unlike both gallium and arsenic, which greatly extends the qubit coherence lifetime.
Prerequisite knowledge
- Some background solid state physics is useful e.g. the electronic band structure of typical semiconductors, including the concept of effective mass
- Zeeman splitting
- Spin-orbit coupling
Main takeaways
- Electron qubits in silicon have a long coherence lifetime but need to be small and are relatively slow.
- Electron qubits in gallium arsenide have a short coherence lifetime (due to nuclear spins).
- Hole qubits in germanium have long coherence lifetimes, don’t need to be so small, and can be operated quickly.
Further thinking
True or False: A small effective mass means that a quantum dot has to be smaller in order to demonstrate quantum confinement.
Further reading
A review on “Semiconductor Spin Qubits” by Guido Burkard et al. https://arxiv.org/abs/2112.08863